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IRF60B217 数据表(PDF) 4 Page - Infineon Technologies AG |
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IRF60B217 数据表(HTML) 4 Page - Infineon Technologies AG |
4 / 10 page 4 2016– 01-05 IRF60B217 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 60µs PULSE WIDTH Tj = 25°C 4.5V VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 60µs PULSE WIDTH Tj = 175°C 4.5V VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 3.0 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 VDS = 30V 60µs PULSE WIDTH TJ = 25°C TJ = 175°C -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 ID = 36A VGS = 10V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 0 1020 30 405060 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 14 VDS= 48V VDS= 30V VDS= 12V ID= 36A |
类似零件编号 - IRF60B217 |
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类似说明 - IRF60B217 |
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