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STFU28N65M2 数据表(PDF) 5 Page - STMicroelectronics |
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STFU28N65M2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 12 page STFU28N65M2 Electrical characteristics DocID027607 Rev 3 5/12 Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage ISD = 20 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V ( see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 384 ns Qrr Reverse recovery charge - 5.7 µC IRRM Reverse recovery current - 30 A trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C, (see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 544 ns Qrr Reverse recovery charge - 8.2 µC IRRM Reverse recovery current - 30.5 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. |
类似零件编号 - STFU28N65M2 |
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类似说明 - STFU28N65M2 |
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