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TPD4S014DSQR 数据表(PDF) 6 Page - Texas Instruments |
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TPD4S014DSQR 数据表(HTML) 6 Page - Texas Instruments |
6 / 26 page 6 TPD4S014 SLVSAU0G – MAY 2011 – REVISED DECEMBER 2015 www.ti.com Product Folder Links: TPD4S014 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) TPD4S014 UNIT DSQ (WSON) 8 PINS RθJA Junction-to-ambient thermal resistance 70.3 °C/W RθJCtop Junction-to-case (top) thermal resistance 46.3 °C/W RθJB Junction-to-board thermal resistance 33.8 °C/W ψJT Junction-to-top characterization parameter 2.9 °C/W ψJB Junction-to-board characterization parameter 33.5 °C/W RθJCbot Junction-to-case (bottom) thermal resistance 16.3 °C/W 6.5 Electrical Characteristics, EN, ACK, D+, D–, ID Pins over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage EN Load current = 50 µA 1 V VIL Low-level input voltage EN Load current = 50 µA 0.5 V ILEAK Input Leakage Current EN, D+, D–, ID VIO = 3.3 V 1 µA VOL Low-level output voltage ACK IOL = 2 mA 0.1 V VD Diode forward Voltage D+, D–, ID pins; lower clamp diode IO = 8 mA 0.95 V ΔCIO Differential Capacitance between the D+, D– lines 0.03 pF CIO Capacitance to GND for the D+, D– lines ƒ = 1 MHz 1.6 pF CIO-ID Capacitance to GND for the ID line 19 pF VR Reverse stand-off voltage of D+, D- and ID pins 5 V VBR Breakdown voltage D+, D–, ID pins IBR = 1 mA 6 V VBR VBUS Breakdown voltage on VBUS IBR = 1 mA 28 V RDYN Dynamic on resistance D+, D–, ID clamps II = 1 A 1 Ω |
类似零件编号 - TPD4S014DSQR |
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类似说明 - TPD4S014DSQR |
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