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L6984TR 数据表(PDF) 8 Page - STMicroelectronics |
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L6984TR 数据表(HTML) 8 Page - STMicroelectronics |
8 / 34 page Electrical characteristics L6984 8/34 DocID025378 Rev 3 IQ OPVIN Quiescent current from VIN LCM - SWO VREF < VFB < VOVP (SLEEP) VBIAS = 3.3 V (2) 11 26 41 A LCM - NO SWO VREF < VFB < VOVP (SLEEP) VBIAS = GND (2) 90 160 230 LNM - SWO VREF < VFB < VOVP VBIAS = 3.3 V 11 26 42 LNM - NO SWO VREF < VFB < VOVP VBIAS = GND 200 320 440 IQ OPVBIAS Quiescent current from VBIAS LCM - SWO VREF < VFB < VOVP (SLEEP) VBIAS = 3.3 V (2) 80 150 200 LNM - SWO VREF < VFB < VOVP VBIAS = 3.3 V 180 300 390 Enable EN EN thresholds Device inhibited 1.1 V Device enabled 2.6 EN hysteresis (3) 650 mV Overvoltage protection VOVP Overvoltage trip (VOVP/VREF) Rising edge 18 23 28 % PGOOD VPGD L Power good LOW threshold VFB rising edge (PGOOD high impedance) (3) 90 % VFB falling edge (PGOOD low impedance) 84 88 92 VPGD H Power good HIGH threshold Internal FB rising edge (PGOOD low impedance) VFB = VCC 118 123 128 Internal FB falling edge (PGOOD high impedance) VFB = VCC (3) 100 VPGOOD PGOOD open collector output VIN > VIN_UVLO_H, VFB=GND 4 mA sinking load 0.6 V 2.9 < VIN < VIN_UVLO_H 100 A sinking load 0.6 V Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
类似零件编号 - L6984TR |
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类似说明 - L6984TR |
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