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1N5819U01B 数据表(PDF) 3 Page - STMicroelectronics |
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1N5819U01B 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page DocID16006 Rev 5 3/10 1N5819U Characteristics 10 To evaluate the conduction losses use the following equation: P = 0.285 x IF(AV) + 0.165 x IF 2 (RMS ) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = 45 V - - 20 µA Tj = 100 °C - - 3.5 mA Tj = -55 °C VR = 45 V - - 20 µA Tj = -55 °C VR = 40 V -- 10 Tj = 25 °C VR = 40 V -- 15 Tj = 100 °C - - 3 mA Tj = 100 °C VR = 35 V - - 2.5 Tj = 100 °C VR = 24 V -- 1.6 Tj = 100 °C VR = 12 V - - 1.2 Tj = 100 °C VR = 6 V -- 1 VF (2) 2. Pulse test: tp = 680 µs, δ < 2% Forward voltage drop Tj = 25 °C IF = 0.1 A - - 350 mV Tj = 25 °C IF = 1A -- 490 Tj = 100 °C - - 450 Tj = - 55 °C - - 650 Tj = 25 °C IF = 3.1 A - - 800 Table 5. Dynamic characteristics Symbo l Parameter Test conditions Min . Ty p. Max . Uni t Cj Diode capacitance VR = 5 V, F = 1 MHz - - 70 pF |
类似零件编号 - 1N5819U01B |
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类似说明 - 1N5819U01B |
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