LM15851 datasheet(9/87 Pages) TI1

部件名	LM15851

功能描述	Ultra-Wideband RF Sampling Subsystem

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制造商	TI1 [Texas Instruments]

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LM15851

www.ti.com

SLAS990D – JANUARY 2014 – REVISED JULY 2015

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V(ESD)

Electrostatic discharge

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

±500

pins(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

All voltages are measured with respect to GND = 0 V, unless otherwise specified.

MIN

MAX

UNIT

1.2-V supply: VA12, VD12

1.14

1.26

V

VDD

Supply voltage

1.9-V supply: VA19

1.8

2

V

1.9 supply

≥ 1.2

Supply sequence (power-up and power-down)

V

supply

VCMI

Analog input common mode voltage

V(VCMO) – 0.15

V(VCMO) + 0.15

V

VIN+, VIN– voltage (maintaining common mode)

0

V(VA19)

V

DEVCLK±, SYSREF±, ~SYNC± pin voltage range

0

V(VA19)

V

VID(CLK)

Differential DEVCLK±, SYSREF±, ~SYNC± amplitude

0.4

2

VPP

VCM(CLK)

SYSREF±, ~SYNC± Common Mode

0.64

1.1

V

TA

Ambient temperature

–40

85

°C

TJ

Junction temperature

135

°C

6.4 Thermal Information

LM15851

THERMAL METRIC(1)

NKE (VQFN)

UNIT

68 PINS

RθJA

Thermal resistance, junction-to-ambient

19.8

°C/W

RθJCbot

Thermal resistance, junction-to-case (bottom)

2.7

°C/W

ψJB

Characterization parameter, junction-to-board

9.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise noted, these specifications apply for V(VA12) = V(VD12) = 1.2 V, V(VA19) = 1.9 V, VIN full scale range at default

setting (725 mVPP), VIN = –1 dBFS, differential AC-coupled sinewave input clock, ƒ(DEVCLK) = 4 GHz at 0.5 VPP with 50% duty

cycle, R(RBIAS) = 3.3 kΩ ±0.1%, after a foreground (FG) mode calibration with timing calibration enabled. Typical values are at

TA = 25°C.

(1) (2)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DYNAMIC PERFORMANCE CHARACTERISTICS

Third-order intermodulation

F1 = 2110 MHz at

−13 dBFS

IMD3

–64

dBc

distortion

F2 = 2170 MHz at

−13 dBFS

DECIMATE-BY-4 MODE

TA = 25°C

59.9

Signal-to-noise ratio,

TA = TMIN to TMAX

56.2

FIN = 600 MHz, –1 dBFS, decimate-by-4

integrated across DDC alias

mode

SNR1

protected output bandwidth

TA = 25°C, calibration = BG

59.2

dBFS

Input frequency-dependent

TA = TMIN to TMAX, calibration = BG

53.3

interleaving spurs included

FIN = 2400 MHz, –1 dBFS, decimate-by-4 mode

56.4

(1)

To ensure accuracy, the VA19, VA12, and VD12 pins are required to be well bypassed. Each supply pin must be decoupled with one or

more bypass capacitors.

(2)

Interleave related fixed frequency spurs at ƒS / 4 and ƒS / 2 are excluded from all SNR, SINAD, ENOB and SFDR specifications. The

magnitude of these spurs is provided separately.

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