STP28N60DM2 datasheet(5/20 Pages) STMICROELECTRONICS

部件名	STP28N60DM2

功能描述	Extremely low gate charge and input capacitance

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 20 page

STB28N60DM2, STP28N60DM2, STW28N60DM2

Electrical characteristics

DocID027040 Rev 4

5/20

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

-

21

A

ISDM(2)

Source-drain current

(pulsed)

-

84

A

VSD(3)

Forward on voltage

VGS = 0 V, ISD = 21 A

-

1.6

V

trr

Reverse recovery time

ISD = 21 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 20:

"Test circuit for inductive load

switching and diode recovery

times")

-

140

ns

Qrr

Reverse recovery charge

-

0.5

µC

IRRM

Reverse recovery current

-

7.4

A

trr

Reverse recovery time

ISD = 21 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 20: "Test circuit for

inductive load switching and

diode recovery times")

-

309

ns

Qrr

Reverse recovery charge

-

2.6

µC

IRRM

Reverse recovery current

-

16.8

A

Notes:

(1) Limited by maximum junction temperature.

(2) Pulse width is limited by safe operating area.

(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±250 µA, ID = 0 A

±30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

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STP28N60DM2 数据表(PDF) 5 Page - STMicroelectronics

STP28N60DM2 数据表(HTML) 5 Page - STMicroelectronics

类似零件编号 - STP28N60DM2

类似说明 - STP28N60DM2

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