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BSC052N03S 数据表(PDF) 2 Page - Infineon Technologies AG |
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BSC052N03S 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page BSC052N03S Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.3 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm 2 cooling area2) -- 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 6.6 8.2 m Ω V GS=10 V, I D=50 A - 4.3 5.2 Gate resistance R G - 0.9 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 43 86 - S 3) See figure 3 1)J-STD20 and JESD22 Values 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2004-04-13 |
类似零件编号 - BSC052N03S |
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类似说明 - BSC052N03S |
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