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BSC032N03S 数据表(PDF) 3 Page - Infineon Technologies AG |
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BSC032N03S 数据表(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page BSC032N03S Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3820 5080 pF Output capacitance C oss - 1360 1810 Reverse transfer capacitance Crss - 173 260 Turn-on delay time t d(on) - 7.5 11 ns Rise time t r - 7.0 11 Turn-off delay time t d(off) -32 48 Fall time t f - 5.4 8 Gate Charge Characteristics 4) Gate to source charge Q gs -11 15 nC Gate charge at threshold Q g(th) - 6.1 8.1 Gate to drain charge Q gd - 7.2 11 Switching charge Q sw -12 18 Gate charge total Q g -29 39 Gate plateau voltage V plateau - 2.9 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -26 34 nC Output charge Q oss V DD=15 V, V GS=0 V -32 43 Reverse Diode Diode continous forward current I S - - 50 A Diode pulse current I S,pulse - - 200 Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.84 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 15 nC 4) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω V DD=15 V, I D=25 A, V GS=0 to 5 V Rev. 1.2 page 3 2004-04-13 |
类似零件编号 - BSC032N03S |
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类似说明 - BSC032N03S |
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