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BF1005S 数据表(PDF) 1 Page - Infineon Technologies AG |
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BF1005S 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page Feb-18-2004 1 BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network EHA07215 GND G1 G2 Drain AGC HF Input HF Output +DC ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF1005S BF1005SR BF1005SW SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - NZs NZs NZ Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 3 V Total power dissipation TS ≤ 76 °C, BF1005S, BF1005SR TS ≤ 94 °C, BF1005SW Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. |
类似零件编号 - BF1005S |
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类似说明 - BF1005S |
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