BCW68H datasheet(3/5 Pages) INFINEON

部件名	BCW68H

功能描述	PNP Silicon AF Transistors

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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3 / 5 page

BCW67, BCW68

3

Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

DC current gain 1)

IC = 500 mA, VCE = 2 V

hFE-grp.A/F

hFE-grp.B/G

hFE-grp.C/H

hFE

35

60

100

-

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VCEsat

-

0.3

0.7

V

Base-emitter saturation voltage 1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

-

1.25

2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

-

200

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

6

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

60

-

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