BCW60 datasheet(3/9 Pages) INFINEON

部件名	BCW60

功能描述	NPN Silicon AF Transistors

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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3 / 9 page

BCW60, BCX70

3

Jan-29-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Collector cutoff current

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

BCW60 /60FF

BCX70

ICBO

-

20

nA

Collector cutoff current

VCB = 32 V, IE = 0 , TA = 150 °C

VCB = 45 V, IE = 0 , TA = 150 °C

BCW60 / 60FF

BCX70

ICBO

-

20

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

-

20

nA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

20

40

100

140

200

300

460

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

120

180

250

380

170

250

350

500

220

310

460

630

DC current gain 1)

IC = 50 mA, VCE = 1 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

50

70

90

100

-

1) Pulse test: t

≤=300µs, D = 2%

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