BC817 datasheet(2/5 Pages) INFINEON

部件名	BC817

功能描述	NPN Silicon AF Transistors

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制造商	INFINEON [Infineon Technologies AG]

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BC817, BC818

2

Nov-29-2001

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BC817

BC818

V(BR)CEO

45

25

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

BC817

BC818

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 25 V, IE = 0

ICBO

-

100

nA

Collector cutoff current

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

50

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain 1)

IC = 100 mA, VCE = 1 V

hFE-grp.16

hFE-grp.25

hFE-grp.40

hFE

100

160

250

160

250

350

250

400

630

-

DC current gain 1)

IC = 300 mA, VCE = 1 V

hFE-grp.16

hFE-grp.25

hFE-grp.40

hFE

60

100

170

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base-emitter saturation voltage 1)

IC = 500 mA, IB = 50 mA

VBEsat

-

1.2

1) Pulse test: t

≤ 300µs, D = 2%

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