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FDD8N50NZTM 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDD8N50NZTM 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2010 Fairchild Semiconductor Corporation FDD8N50NZ Rev. C1 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *Notes: 1. VGS = 10V 2. ID = 3.25A TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 *Notes: 1. VGS = 0V 2. ID = 250μA TJ, Junction Temperature [ oC] 1 10 100 1000 0.01 0.1 1 10 50 30μs 100μs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse DC 25 50 75 100 125 150 0.0 1.4 2.8 4.2 5.6 7.0 TC, Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *Notes: 1. ZθJC(t) = 1.4 oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] t1 PDM t2 t1, Rectangular Pulse Duration [sec] |
类似零件编号 - FDD8N50NZTM |
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类似说明 - FDD8N50NZTM |
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