数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MMSF5P02HD 数据表(PDF) 9 Page - ON Semiconductor

部件名 MMSF5P02HD
功能描述  P-Channel Power MOSFET
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMSF5P02HD 数据表(HTML) 9 Page - ON Semiconductor

Back Button MMSF5P02HD Datasheet HTML 3Page - ON Semiconductor MMSF5P02HD Datasheet HTML 4Page - ON Semiconductor MMSF5P02HD Datasheet HTML 5Page - ON Semiconductor MMSF5P02HD Datasheet HTML 6Page - ON Semiconductor MMSF5P02HD Datasheet HTML 7Page - ON Semiconductor MMSF5P02HD Datasheet HTML 8Page - ON Semiconductor MMSF5P02HD Datasheet HTML 9Page - ON Semiconductor MMSF5P02HD Datasheet HTML 10Page - ON Semiconductor MMSF5P02HD Datasheet HTML 11Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 9 / 11 page
background image
MMSF5P02HD
http://onsemi.com
9
INFORMATION FOR USING THE SO−8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self−align when
subjected to a solder reflow process.
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO−8 POWER DISSIPATION
The power dissipation of the SO−8 is a function of the
input pad size. This can vary from the minimum pad size
for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet for the SO−8 package, PD can be calculated as
follows:
PD =
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 1.6 Watts.
PD =
150°C − 25°C
80°C/W
= 1.6 Watts
The 80°C/W for the SO−8 package assumes the
recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.6 Watts using the
footprint shown. Another alternative would be to use a
ceramic substrate or an aluminum core board such as
Thermal Clad
t. Using board material such as Thermal
Clad, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.


类似零件编号 - MMSF5P02HD

制造商部件名数据表功能描述
logo
Motorola, Inc
MMSF5P02HD MOTOROLA-MMSF5P02HD Datasheet
208Kb / 12P
   SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS
More results

类似说明 - MMSF5P02HD

制造商部件名数据表功能描述
logo
Seme LAB
IRFN9240SMD SEME-LAB-IRFN9240SMD Datasheet
23Kb / 2P
   P-CHANNEL POWER MOSFET
logo
Jiangsu Changjiang Elec...
CJ3139KW JIANGSU-CJ3139KW Datasheet
1Mb / 5P
   P-Channel Power MOSFET
logo
ON Semiconductor
MTB50P03HDL ONSEMI-MTB50P03HDL_14 Datasheet
143Kb / 9P
   P-Channel Power MOSFET
January, 2014 ??Rev. 7
logo
Unisonic Technologies
UT3P01Z UTC-UT3P01Z_10 Datasheet
173Kb / 4P
   P CHANNEL POWER MOSFET
logo
Infineon Technologies A...
BSB027P03LX3G INFINEON-BSB027P03LX3G Datasheet
1Mb / 13P
   p-Channel Power MOSFET
1.9, 2011-03-02
logo
Gunter Seniconductor Gm...
GFC9110 GSG-GFC9110 Datasheet
116Kb / 1P
   P Channel Power MOSFET
GFC9140 GSG-GFC9140 Datasheet
116Kb / 1P
   P Channel Power MOSFET
GFC9210 GSG-GFC9210 Datasheet
112Kb / 1P
   P Channel Power MOSFET
GFC9240 GSG-GFC9240 Datasheet
115Kb / 1P
   P Channel Power MOSFET
logo
Micro Commercial Compon...
MCQ4435A MCC-MCQ4435A Datasheet
641Kb / 4P
   P-Channel Power MOSFET
logo
Unisonic Technologies
UT9435 UTC-UT9435_15 Datasheet
243Kb / 4P
   P-CHANNEL POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com