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MCH3333A-TL-H 数据表(PDF) 2 Page - ON Semiconductor

部件名 MCH3333A-TL-H
功能描述  Single P-Channel Power MOSFET
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MCH3333A-TL-H 数据表(HTML) 2 Page - ON Semiconductor

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MCH3333A
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ELECTRICAL CHARACTERISTICS at Ta
= 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=−1mA, VGS=0V
−30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=−30V, VGS=0V
−1
μA
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Gate Threshold Voltage
VGS(th)
VDS=−10V, ID=−1mA
−0.4
−1.3
V
Forward Transconductance
gFS
VDS=−10V, ID=−1.0A
2.5
S
Static Drain to Source On-State
Resistance
RDS(on)1
ID=−1.0A, VGS=−4V
165
215
m
Ω
RDS(on)2
ID=−0.5A, VGS=−2.5V
200
280
m
Ω
RDS(on)3
ID=−0.2A, VGS=−1.8V
270
430
m
Ω
Input Capacitance
Ciss
VDS=−10V, f=1MHz
240
pF
Output Capacitance
Coss
39
pF
Reverse Transfer Capacitance
Crss
31
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
5.7
ns
Rise Time
tr
9.7
ns
Turn-OFF Delay Time
td(off)
27
ns
Fall Time
tf
16
ns
Total Gate Charge
Qg
VDS=−15V, VGS=−4V, ID=−2.0A
2.8
nC
Gate to Source Charge
Qgs
0.3
nC
Gate to Drain “Miller” Charge
Qgd
0.95
nC
Forward Diode Voltage
VSD
IS=−2.0A, VGS=0V
−0.87
−1.5
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
PW=10
μs
D.C.≤1%
P.G
50
Ω
G
S
D
ID=--1.0A
RL=15Ω
VDD= --15V
VOUT
VIN
0V
--4V
VIN
MCH3333A


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