74LVC04ADR2G datasheet(4/7 Pages) ONSEMI

部件名	74LVC04ADR2G

功能描述	Low-Voltage CMOS Hex Inverter

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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74LVC04A

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AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)

Symbol

Parameter

Conditions

−40

5C to +855C

−40

5C to +1255C

Unit

Min

Typ1

Max

Min

Typ1

Max

tpd

Propagation Delay (Note 5)

VCC = 1.2 V

−

14.0

−

ns

VCC = 1.65 V to 1.95 V

0.5

3.7

8.8

0.5

−

10.2

ns

VCC = 2.3 V to 2.7 V

0.5

2.2

5.0

0.5

−

5.8

VCC = 2.7 V

0.5

2.1

5.5

0.5

−

7.0

VCC = 3.0 V to 3.6 V

0.5

2.0

4.5

0.5

−

6.0

tsk(0)

Output Skew Time (Note 6)

VCC = 3.0 V to 3.6 V

−

1.0

−

1.5

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Typical values are measured at TA = 25

°C and VCC = 3.3 V, unless stated otherwise.

5. tpd is the same as tPLH and tPHL.

6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.

The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter

guaranteed by design.

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25°C

Unit

Min

Typ

Max

VOLP

Dynamic LOW Peak Voltage (Note 7)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

0.8

0.6

V

VOLV

Dynamic LOW Valley Voltage (Note 7)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

−0.8

−0.6

V

7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

Input Capacitance

VCC = 3.3 V, VI = 0 V or VCC

4.0

pF

COUT

Output Capacitance

VCC = 3.3 V, VI = 0 V or VCC

5.0

pF

CPD

Power Dissipation Capacitance

(Note 8)

Per input; VI = GND or VCC

pF

VCC = 1.65 V to 1.95 V

3.9

VCC = 2.3 V to 2.7 V

7.1

VCC = 3.0 V to 3.6 V

9.9

8. CPD is used to determine the dynamic power dissipation (PD in mW).

PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:

fi = input frequency in MHz; fo = output frequency in MHz

CL = output load capacitance in pF VCC = supply voltage in Volts

N = number of outputs switching

S(CL x VCC2 x fo) = sum of the outputs.

类似零件编号 - 74LVC04ADR2G

制造商	部件名	数据表	功能描述
NXP Semiconductors	74LVC04AD	87Kb / 10P	Hex inverter 1997 Jun 30
NXP Semiconductors	74LVC04AD	120Kb / 15P	Hex inverter Rev. 9-17 November 2011
Nexperia B.V. All right...	74LVC04AD	233Kb / 12P	Hex inverter Rev. 11 - 17 September 2021
Nexperia B.V. All right...	74LVC04AD-Q100	703Kb / 14P	Hex inverter
NXP Semiconductors	74LVC04ADB	87Kb / 10P	Hex inverter 1997 Jun 30

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