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1N6100 数据表(PDF) 2 Page - Microsemi Corporation

部件名 1N6100
功能描述  DIODE ARRAY CIRCUITS
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

1N6100 数据表(HTML) 2 Page - Microsemi Corporation

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DIODE ARRAY SERIES
6/91 Rev 1.1 2/94
LINFINITY Microelectronics Inc.
Copyright
© 1994
11861 Western Avenue
∞ Garden Grove, CA 92841
2
(714) 898-8121
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (V
BR) ....................................................
Output Current (I
O), TC = 25°C
Continuous .................................................................
75V
300mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................
Lead Temperature (Soldering, 10 seconds) ..................
150
°C
-65
°C to 200°C
300
°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-Junction to Case,
θ
JC ..................
30°C/W
Thermal Resistance-Junction to Ambient,
θ
JA .............. 80°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case,
θ
JC ..................
80°C/W
Thermal Resistance-Junction to Ambient,
θ
JA ...........
140°C/W
F Package (16 Pin):
Thermal Resistance-Junction to Case,
θ
JC ..................
70°C/W
Thermal Resistance-Junction to Ambient,
θ
JA ...........
115°C/W
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
Note B. The above numbers for
θ
JC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
JA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SG6100 .......................................................... -55
°C to 150°C
SG6101 .......................................................... -55
°C to 150°C
Note 3. Range over which the device is functional.
RECOMMENDED OPERATING CONDITIONS (Note 3)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of T
A
= 25
°C for each diode. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
1.0
1.0
25
100
50
4
15
5
Min.
Typ. Max.
V
V
V
nA
nA
µA
pf
ns
ns
I
R = 5µA, Duty Cycle < 20%
Duty Cycle
≤ 2%, 300 µs pulse
I
F = 100mA
I
F = 10mA, TA = -55°C
V
R = 20V
V
R = 40V
V
R = 40V, TA = 150°C
V
R = 0V, f = 1MHz, Pin-to-pin
I
F = 500mA, tr ≤ 15ns, V fr = 1.8V, RS = 50Ω
I
F = IR = 200mA, irr = 20mA, RL = 100Ω
Breakdown Voltage (V
BR )
Forward Voltage (V
F)
Reverse Current (I
R)
Capacitance (C) (Note 4)
Forward Recovery Time (t
fr)
(Note 4)
Reverse Recovery Time (t
rr)
(Note 4)
75
Test Conditions
Units
Parameter
Note 4. The parameters, although guaranteed, are not 100% tested in production.
SG6511 .......................................................... -55
°C to 150°C
SG6510 .......................................................... -55
°C to 150°C
SG6100/SG6511
SG6010/SG6510


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