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1N6100 数据表(PDF) 2 Page - Microsemi Corporation |
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1N6100 数据表(HTML) 2 Page - Microsemi Corporation |
2 / 3 page DIODE ARRAY SERIES 6/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc. Copyright © 1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 2 (714) 898-8121 ∞ ∞ ∞ ∞ ∞ FAX: (714) 893-2570 ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown Voltage (V BR) .................................................... Output Current (I O), TC = 25°C Continuous ................................................................. 75V 300mA Operating Junction Temperature Hermetic (J, F Packages) ............................................ Storage Temperature Range ............................ Lead Temperature (Soldering, 10 seconds) .................. 150 °C -65 °C to 200°C 300 °C Note 1. Exceeding these ratings could cause damage to the device. Note 2. Applicable for each diode. THERMAL DATA J Package (14 & 16 Pin): Thermal Resistance-Junction to Case, θ JC .................. 30°C/W Thermal Resistance-Junction to Ambient, θ JA .............. 80°C/W F Package (14 Pin): Thermal Resistance-Junction to Case, θ JC .................. 80°C/W Thermal Resistance-Junction to Ambient, θ JA ........... 140°C/W F Package (16 Pin): Thermal Resistance-Junction to Case, θ JC .................. 70°C/W Thermal Resistance-Junction to Ambient, θ JA ........... 115°C/W Note A. Junction Temperature Calculation: T J = T A + (P D x θ JA ). Note B. The above numbers for θ JC are maximums for the limiting thermal resistance of the package in a standard mount- ing configuration. The θ JA numbers are meant to be guidelines for the thermal performance of the device/pc- board system. All of the above assume no ambient airflow. Operating Ambient Temperature Range SG6100 .......................................................... -55 °C to 150°C SG6101 .......................................................... -55 °C to 150°C Note 3. Range over which the device is functional. RECOMMENDED OPERATING CONDITIONS (Note 3) ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply for the operating ambient temperature of T A = 25 °C for each diode. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) 1.0 1.0 25 100 50 4 15 5 Min. Typ. Max. V V V nA nA µA pf ns ns I R = 5µA, Duty Cycle < 20% Duty Cycle ≤ 2%, 300 µs pulse I F = 100mA I F = 10mA, TA = -55°C V R = 20V V R = 40V V R = 40V, TA = 150°C V R = 0V, f = 1MHz, Pin-to-pin I F = 500mA, tr ≤ 15ns, V fr = 1.8V, RS = 50Ω I F = IR = 200mA, irr = 20mA, RL = 100Ω Breakdown Voltage (V BR ) Forward Voltage (V F) Reverse Current (I R) Capacitance (C) (Note 4) Forward Recovery Time (t fr) (Note 4) Reverse Recovery Time (t rr) (Note 4) 75 Test Conditions Units Parameter Note 4. The parameters, although guaranteed, are not 100% tested in production. SG6511 .......................................................... -55 °C to 150°C SG6510 .......................................................... -55 °C to 150°C SG6100/SG6511 SG6010/SG6510 |
类似零件编号 - 1N6100 |
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类似说明 - 1N6100 |
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