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SS8P3C 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SS8P3C
功能描述  High Current Density Surface Mount Dual Common Cathode Schottky Rectifier
Download  5 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SS8P3C 数据表(HTML) 1 Page - Vishay Siliconix

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SS8P3C, SS8P4C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-15
1
Document Number: 89029
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Dual Common Cathode Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS-compliant,
and
commercial grade
Base
P/NHM3
-
halogen-free,
RoHS-compliant
and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4.0 A
VRRM
30 V, 40 V
IFSM
120 A
EAS
20 mJ
VF at IF = 4 A
0.42 V
TJ max.
150 °C
Package
TO-277A
Diode variations
Single
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMP® Series
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P3C
SS8P4C
UNIT
Device marking code
S83C
S84C
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (fig. 1)
total device
IF(AV)
8.0
A
per diode
4.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C


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