MSAHX75L60C datasheet(2/2 Pages) MICROSEMI

部件名	MSAHX75L60C

功能描述	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP.

MAX

UNIT

Collector-to-Emitter Breakdown Voltage

(Gate Shorted to Emitter)

BVCES

VGS = 0 V, IC = 250

µA

600

V

Gate Threshold Voltage

VGE(th)

VCE = VGE, IC = 250

µA

2.5

5.0

V

Gate-to-Emitter Leakage Current

IGES

VGE =

± 20V

DC, VCE = 0

T J = 25

°C

T J = 125

°C

±100

±200

nA

Collector-to-Emitter Leakage Current (Zero Gate

Voltage Collector Current)

ICES

VCE =0.8

•BV

CES

TJ = 25

°C

VGE = 0 V

T J = 125

°C

200

1000

µA

Collector-to-Emitter Saturation Voltage (1)

VCE(sat)

VGE= 15V, IC= 60A

T J = 25

°C

I C= 60A

T J = 125

°C

1.8

V

Forward Transconductance (1)

gfs

VCE

≥ 10 V; I

C = 60 A

30

40

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Cies

Coes

Cres

VGE = 0 V, VCE = 25 V, f = 1 MHz

4000

340

100

pF

INDUCTIVE LOAD, Tj= 25

°°C

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Off Energy

td(on)

tri

td(off)

tfi

Eoff

VGE = 15 V, V CE = 480 V,

IC = 60 A, R G = 2.7

Ω,

L= 100

µH note 2, 3

50

210

600

500

16

800

700

ns

mJ

INDUCTIVE LOAD, Tj= 125

°°C

Turn-on Delay Time

Rise Time

On Energy

Turn-off Delay Time

Fall Time

Off Energy

td(on)

tri

Eon

td(off)

tfi

Eoff

VGE = 15 V, V CE = 480 V,

IC = 60 A, R G = 2.7

Ω,

L= 100

µH note 2, 3

50

240

3

1000

26

ns

mJ

ns

mJ

Total Gate Charge

Gate-to-Emitter Charge

Gate-to-Collector (Miller) Charge

Qg

Qge

Qgc

VGE = 15 V, V CE = 300V, I C = 50A

200

35

80

250

50

100

nC

Antiparallel diode forward voltage

VF

IE= 30 A

T J = 25

°C

IE= 60 A

T J = 25

°C

IE= 100 A

T J = 25

°C

IE= 60 A

T J = 150

°C

1.55

1.75

2

1.5

V

Antiparallel diode reverse recovery time

trr

IE= 1 A, dIE/dt= 100 A/us, T J= 25

°C

IE= 10 A, dIE/dt= 200 A/us, T J= 100

°C

IE= 40 A, dIE/dt= 200 A/us, T J= 100

°C

35

120

140

150

ns

Antiparallel diode reverse recovery charge

Qrr

IE= 10 A, dIE/dt= 200 A/us, T J= 100

°C

IE= 40 A, dIE/dt= 100 A/us, T J= 100

°C

500

750

nC

Antiparallel diode peak recovery current

IRM

IE= 10 A, dIE/dt= 200 A/us, T J= 100

°C

IE= 40 A, dIE/dt= 200 A/us, T J= 100

°C

7

9

A

Electrical Parameters @ 25

°°C (unless otherwise specified)

Notes

(1)

Pulse test, t

≤≤ 300 µµs, duty cycle δδ ≤≤ 2%

(2)

switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.

(3)

switching losses include “tail” losses

(4)

Microsemi Corp. does not manufacture the igbt die; contact company for details.

MSAHX75L60C

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