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MCH6103-TL-E 数据表(PDF) 2 Page - ON Semiconductor

部件名 MCH6103-TL-E
功能描述  Bipolar Transistor
Download  8 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MCH6103-TL-E 数据表(HTML) 2 Page - ON Semiconductor

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MCH6103/MCH6203
No.6611-2/8
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Current
IC
(--)1.0
A
Collector Current (Pulse)
ICP
(--)3
A
Base Current
IB
200
mA
Collector Dissipation
PC
When mounted on ceramic substrate (600mm2×0.8mm)
1.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)100mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)300mA
420
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(9)6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)500mA, IB=(--)10mA
(--280)130
(--430)190
mV
VCE(sat)2
IC=(--)300mA, IB=(--)6mA
(--145)90
(--220)135
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)500mA, IB=(--)10mA
(--)0.81
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA, RBE=0Ω
(--50)80
V
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)5
V
Turn-On Time
ton
See specified Test Circuit.
(36)38
ns
Storage Time
tstg
(173)332
ns
Fall Time
tf
(28)40
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
MCH6103-TL-E
MCPH6
3,000pcs./reel
Pb Free
MCH6203-TL-E
MCPH6
3,000pcs./reel
VR
RB
VCC=25V
VBE= --5V
+
+
50Ω
INPUT
OUTPUT
RL
50Ω
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC=20IB1= --20IB2=500mA
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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