LM5025A_15 datasheet(6/23 Pages) TI

部件名	LM5025A

功能描述	Active Clamp Voltage Mode PWM Controller

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制造商	TI [Texas Instruments]

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LM5025A

SNVS293E – DECEMBER 2004 – REVISED MARCH 2013

www.ti.com

Electrical Characteristics (continued)

Specifications with standard typeface are for TJ = 25°C, and those with boldface type apply over full Operating Junction

Temperature range. VIN = 48V, VCC = 10V, RT = 31.3kΩ, RSET = 27.4kΩ) unless otherwise stated

(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Cycle Skip Threshold Voltage

Resets SS capacitor; auto restart

0.45

0.5

0.55

V

(CS2)

Leading Edge Blanking Time

50

ns

(CS1)

CS1 Sink Impedance (clocked)

CS1 = 0.4V

30

50

Ω

CS1 Sink Impedance (Post Fault

CS1 = 0.6V

15

30

Ω

Discharge)

CS2 Sink Impedance (Post Fault

CS2 = 0.6V

55

95

Ω

Discharge)

CS1 and CS2 Leakage Current

CS = CS Threshold - 100mV

1

µA

Soft-Start

Soft-start Current Source Normal

17

22

27

µA

Soft-start Current Source following

0.5

1

1.5

µA

a CS2 event

Oscillator

Frequency1

TA = 25°C,

180

200

220

kHz

TJ = Tlow to Thigh

175

225

Frequency2

RT = 10.4k

Ω

510

580

650

kHz

Sync threshold

2

V

Min Sync Pulse Width

100

ns

Sync Frequency Range

160

kHz

PWM Comparator

Delay to Output

COMP step 5V to 0V,

40

ns

Time to onset of OUT_A transition low

Duty Cycle Range

0

80

%

COMP to PWM Offset

0.7

1

1.3

V

COMP Open Circuit Voltage

4.3

5.9

V

COMP Short Circuit Current

COMP = 0V

0.6

1

1.4

mA

Volt x Second Clamp

Ramp Clamp Level

Delta RAMP measured from onset of

2.4

2.5

2.6

V

OUT_A to Ramp peak,

COMP = 5V

UVLO Shutdown

Undervoltage Shutdown Threshold

2.44

2.5

2.56

V

Undervoltage Shutdown

16

20

24

µA

Hysteresis

Output Section

OUT_A High Saturation

MOS Device at Iout = -10mA

5

10

Ω

OUTPUT_A Peak Current Sink

Bipolar Device at Vcc/2

3

A

OUT_A Low Saturation

MOS Device at Iout = 10mA

6

9

Ω

OUTPUT_A Rise Time

Cgate = 2.2nF

20

ns

OUTPUT_A Fall Time

Cgate = 2.2nF

15

ns

OUT_B High Saturation

MOS Device at Iout = -10mA

10

20

Ω

OUTPUT_B Peak Current Sink

Bipolar Device at Vcc/2

1

A

OUT_B Low Saturation

MOS Device at Iout = 10mA

12

18

Ω

OUTPUT_B Rise Time

Cgate = 1nF

20

ns

OUTPUT_B Fall Time

Cgate = 1nF

15

ns

6

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