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FCDN605 数据表(PDF) 2 Page - ON Semiconductor |
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FCDN605 数据表(HTML) 2 Page - ON Semiconductor |
2 / 3 page FCDN605 http://onsemi.com 2 Table 1. PIN DESCRIPTIONS FCDN605−UBM (Schematic and Top View) Designation Schematic Top View Metal Composition 1 Signal Node Wirebond Pad Al 2 Signal Node DAP Cu 3 Reference Node Test Point − 4 Reference Node N/A Bare Silicon Table 2. ORDERING INFORMATION Ordering Part Number DAP (Die Attach Pad) Backside Metal BG Thickness Shipping Method FCDN605−UBM Cu (Copper) Bare Silicon 10 mils Wafer Form SPECIFICATIONS Table 3. ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit Operating Junction Temperature Range −40 to +150 C Storage Junction Temperature Range −65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 4. STANDARD OPERATING CONDITIONS Parameter Rating Unit Operating Junction Temperature Range −40 to +150 C Table 5. ELECTRICAL OPERATING CHARACTERISTICS (See Note 1) Symbol Parameter Test Conditions Min Typ Max Unit ILEAK Leakage Current V = 5 V, 25C V = −10 V, 25C V = 5 V, 150C +0.35 −0.35 4.0 mA mA mA VCL Clamp Voltage on Signal Node Positive Polarity Negative Polarity TA = 25C at 10 mA at −10 mA +5 −14 +7 −11.5 +9 −10 V VESD ESD Protection − Withstand Voltage: Human Body Model (MIL−STD−883, Method 3015) TA = 25C 15 kV VCL_ESD Clamping Voltage on Signal Node for Transients Positive Polarity Negative Polarity IPP = 1 A, tP = 8/20 ms Positive Transients Negative Transients +7 −12 V RDYN Dynamic Resistance RDYN+ RDYN− IPP = 1 A, tP = 8/20 ms Positive Transients Negative Transients 0.4 0.8 W CIN Input Capacitance At 1 MHz, 30 mV osc. Level, 0 VDC Bias (Note 2) At 1 MHz, 30 mV osc. Level, 3 VDC bias 107 79 pF 1. Operating characteristics are over standard operating conditions unless otherwise specified. |
类似零件编号 - FCDN605 |
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类似说明 - FCDN605 |
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