数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MT55L512V18P 数据表(PDF) 21 Page - Micron Technology

部件名 MT55L512V18P
功能描述  8Mb ZBT SRAM
Download  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

MT55L512V18P 数据表(HTML) 21 Page - Micron Technology

Back Button MT55L512V18P Datasheet HTML 17Page - Micron Technology MT55L512V18P Datasheet HTML 18Page - Micron Technology MT55L512V18P Datasheet HTML 19Page - Micron Technology MT55L512V18P Datasheet HTML 20Page - Micron Technology MT55L512V18P Datasheet HTML 21Page - Micron Technology MT55L512V18P Datasheet HTML 22Page - Micron Technology MT55L512V18P Datasheet HTML 23Page - Micron Technology MT55L512V18P Datasheet HTML 24Page - Micron Technology MT55L512V18P Datasheet HTML 25Page - Micron Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 21 / 30 page
background image
21
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18P_2.p65 – Rev. 6/01
©2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
NOTE: 1. VDDQ = +3.3V ±0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O
configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
is active (not in deselected mode).
4. Typical values are measured at +3.3V, +25°C and 10ns cycle time.
5. This parameter is sampled.
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0°C
≤ T
A ≤ +70°C; VDD = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
TYP
-6
-7.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL
Current: Operating
or
≥ VIH; Cycle time ≥ tKC (MIN);
IDD
200
500
400
300
m A
2, 3, 4
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
CKE#
≥ VIH;IDD1
10
25
25
20
m A
2, 3, 4
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
0.5
10
10
10
m A
3, 4
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
6
252525
m A
3, 4
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADV/LD#
≥ VIH; All inputs ≤ VSS + 0.2
ISB4
45
120
75
60
m A
3, 4
or
≥ VDD - 0.2; Cycle time ≥ tKC (MIN)
Snooze Mode
ZZ
≥ VIH
ISB2Z
0.5
10
10
10
m A
4
MAX
TQFP THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Thermal Resistance
Test conditions follow standard test methods
θ
JA
40
°C/W
5
(Junction to Ambient)
and procedures for measuring thermal
Thermal Resistance
impedance, per EIA/JESD51.
θ
JC
8
°C/W
5
(Junction to Top of Case)
BGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
θ
JA
40
°C/W
5
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
θ
JC
9
°C/W
5


类似零件编号 - MT55L512V18P

制造商部件名数据表功能描述
logo
Micron Technology
MT55L512V18P MICRON-MT55L512V18P Datasheet
304Kb / 25P
   8Mb ZBT SRAM
More results

类似说明 - MT55L512V18P

制造商部件名数据表功能描述
logo
Micron Technology
MT55L512L18P MICRON-MT55L512L18P Datasheet
304Kb / 25P
   8Mb ZBT SRAM
logo
Integrated Device Techn...
IDT71V2546S IDT-IDT71V2546S_11 Datasheet
733Kb / 21P
   3.3V Synchronous ZBT SRAM
logo
Integrated Circuit Solu...
IC61S25632T ICSI-IC61S25632T Datasheet
397Kb / 22P
   8Mb SyncBurst Pipelined SRAM
logo
Dallas Semiconductor
DS1265W DALLAS-DS1265W_10 Datasheet
192Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1265W MAXIM-DS1265W Datasheet
192Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
19-5617; Rev 11/10
logo
Dallas Semiconductor
DS1265W DALLAS-DS1265W Datasheet
155Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
logo
Integrated Circuit Solu...
IC61SF25632T ICSI-IC61SF25632T Datasheet
476Kb / 19P
   8Mb SyncBurst Flow through SRAM
logo
GSI Technology
GS78108B GSI-GS78108B Datasheet
210Kb / 10P
   1M x 8 8Mb Asynchronous SRAM
logo
Maxim Integrated Produc...
DS2065W MAXIM-DS2065W Datasheet
180Kb / 12P
   3.3V Single-Piece 8Mb Nonvolatile SRAM
Rev 0; 1/05
DS3065WP MAXIM-DS3065WP Datasheet
1Mb / 15P
   3.3V, 8Mb, Nonvolatile SRAM with Clock
19-5450; Rev 0; 7/10
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com