数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MT55L256L36P 数据表(PDF) 20 Page - Micron Technology

部件名 MT55L256L36P
功能描述  8Mb ZBT SRAM
Download  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

MT55L256L36P 数据表(HTML) 20 Page - Micron Technology

Back Button MT55L256L36P Datasheet HTML 16Page - Micron Technology MT55L256L36P Datasheet HTML 17Page - Micron Technology MT55L256L36P Datasheet HTML 18Page - Micron Technology MT55L256L36P Datasheet HTML 19Page - Micron Technology MT55L256L36P Datasheet HTML 20Page - Micron Technology MT55L256L36P Datasheet HTML 21Page - Micron Technology MT55L256L36P Datasheet HTML 22Page - Micron Technology MT55L256L36P Datasheet HTML 23Page - Micron Technology MT55L256L36P Datasheet HTML 24Page - Micron Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 20 / 30 page
background image
20
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18P_2.p65 – Rev. 6/01
©2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
≤ T
A ≤ +70°C; VDD = +3.3V ±0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
VIHQ
1.7
VDDQ + 0.3
V
1, 2
Inputs
VIH
1.7
VDD + 0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1, 2
Input Leakage Current
0V
≤ VIN ≤ VDD
ILI
-1.0
1.0
µA
3
Output Leakage Current
Output(s) disabled,
ILO
-1.0
1.0
µA
0V
≤ VIN ≤ VDDQ (DQx)
Output High Voltage
IOH = -2.0mA
VOH
1.7
V1
IOH = -1.0mA
VOH
2.0
V1
Output Low Voltage
IOL = 2.0mA
VOL
0.7
V
1
IOL = 1.0mA
VOL
0.4
V
1
Supply Voltage
VDD
3.135
3.465
V
1
Isolated Output Buffer Supply
VDDQ
2.375
2.9
V
1
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH
≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot:
VIL
≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up:
VIH
≤ +3.465V and VDD ≤ +3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. This parameter is sampled.
5. Preliminary package data.
TQFP CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Control Input Capacitance
TA = +25°C; f = 1 MHz
CI
34
pF
4
Input/Output Capacitance (DQ)
VDD = +3.3V
CO
45
pF
4
Address Capacitance
CA
3
3.5
pF
4
Clock Capacitance
CCK
3
3.5
pF
4
FBGA CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Address/Control Input Capacitance
CI
2.5
3.5
p F
4, 5
Output Capacitance (Q)
T
A = 25°C; f = 1 MHz
CO
4
5
p F
4, 5
Clock Capacitance
CCK
2.5
3.5
p F
4, 5
BGA CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Address/Control Input Capacitance
T
A = +25°C; f = 1 MHz
CI
47
pF
4
Input/Output Capacitance (DQ)
VDD = 3.3V
CO
4.5
5.5
pF
4
Address Capacitance
CA
47
pF
4
Clock Capacitance
CCK
4.5
5.5
pF
4


类似零件编号 - MT55L256L36P

制造商部件名数据表功能描述
logo
Micron Technology
MT55L256L36P MICRON-MT55L256L36P Datasheet
304Kb / 25P
   8Mb ZBT SRAM
More results

类似说明 - MT55L256L36P

制造商部件名数据表功能描述
logo
Micron Technology
MT55L512L18P MICRON-MT55L512L18P Datasheet
304Kb / 25P
   8Mb ZBT SRAM
logo
Integrated Device Techn...
IDT71V2546S IDT-IDT71V2546S_11 Datasheet
733Kb / 21P
   3.3V Synchronous ZBT SRAM
logo
Integrated Circuit Solu...
IC61S25632T ICSI-IC61S25632T Datasheet
397Kb / 22P
   8Mb SyncBurst Pipelined SRAM
logo
Dallas Semiconductor
DS1265W DALLAS-DS1265W_10 Datasheet
192Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1265W MAXIM-DS1265W Datasheet
192Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
19-5617; Rev 11/10
logo
Dallas Semiconductor
DS1265W DALLAS-DS1265W Datasheet
155Kb / 8P
   3.3V 8Mb Nonvolatile SRAM
logo
Integrated Circuit Solu...
IC61SF25632T ICSI-IC61SF25632T Datasheet
476Kb / 19P
   8Mb SyncBurst Flow through SRAM
logo
GSI Technology
GS78108B GSI-GS78108B Datasheet
210Kb / 10P
   1M x 8 8Mb Asynchronous SRAM
logo
Maxim Integrated Produc...
DS2065W MAXIM-DS2065W Datasheet
180Kb / 12P
   3.3V Single-Piece 8Mb Nonvolatile SRAM
Rev 0; 1/05
DS3065WP MAXIM-DS3065WP Datasheet
1Mb / 15P
   3.3V, 8Mb, Nonvolatile SRAM with Clock
19-5450; Rev 0; 7/10
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com