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SI4100DY 数据表(PDF) 1 Page - Vishay Telefunken |
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SI4100DY 数据表(HTML) 1 Page - Vishay Telefunken |
1 / 10 page Vishay Siliconix Si4100DY Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 www.vishay.com 1 N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) 100 0.063 at VGS = 10 V 6.8 9 nC 0.084 at VGS = 6 V 5.8 N-Channel MOSFET G D S D S D D G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.8 A TC = 70 °C 5.4 TA = 25 °C 4.4a, b TA = 70 °C 3.5a, b Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 5 TA = 25 °C 2.1a, b Single Avalanche Current L = 0.1 mH IAS 19 Single Avalanche Energy EAS 18 mJ Maximum Power Dissipation TC = 25 °C PD 6 W TC = 70 °C 3.8 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, c t ≤ 10 s RthJA 37 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 |
类似零件编号 - SI4100DY |
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