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SI4914BDY 数据表(PDF) 3 Page - Vishay Telefunken

部件名 SI4914BDY
功能描述  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Download  15 Pages
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制造商  TFUNK [Vishay Telefunken]
网页  http://www.vishay.com
标志 TFUNK - Vishay Telefunken

SI4914BDY 数据表(HTML) 3 Page - Vishay Telefunken

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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si4914BDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Channel-2
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Ch-1
9
18
ns
Ch-2
10
20
Rise Time
tr
Ch-1
10
20
Ch-2
9
18
Turn-Off Delay Time
td(off)
Ch-1
16
32
Ch-2
16
32
Fall Time
tf
Ch-1
9
18
Ch-2
8
16
Source-Drain Reverse Recovery Time
trr
IF = 2.2 A, dI/dt = 100 A/µs
Ch-1
35
55
IF = 2.2 A, dI/dt = 100 A/µs
Ch-2
21
35
Body Diode Reverse Recovery Charge
Qrr
IF = 2.2 A, dI/dt = 100 A/µs
Ch-1
40
nC
IF = 2.2 A, dI/dt = 100 A/µs
Ch-2
11
Reverse Recovery Fall Time
ta
IF = 2.2 A, dI/dt = 100 A/µs
Ch-1
19
ns
IF = 2.2 A, dI/dt = 100 A/µs
Ch-2
11
Reverse Recovery Rise Time
tb
IF = 2.2 A, dI/dt = 100 A/µs
Ch-1
16
IF = 2.2 A, dI/dt = 100 A/µs
Ch-2
10


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