SI4160DY datasheet(1/10 Pages) TFUNK

部件名	SI4160DY

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	TFUNK [Vishay Telefunken]

网页	http://www.vishay.com

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Vishay Siliconix

Si4160DY

New Product

Document Number: 69069

S-83092-Rev. A, 29-Dec-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Notebook

- Vcore low side

- DC/DC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0049 at VGS = 10 V

25.4

16.9 nC

0.0063 at VGS = 4.5 V

22.4

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4160DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

25.4

A

TC = 70 °C

20.2

TA = 25 °C

16.8b, c

TA = 70 °C

13.4b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5.1

TA = 25 °C

2.2b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

30

Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5.7

W

TC = 70 °C

3.6

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

39

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

18

22

类似零件编号 - SI4160DY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4160DY	141Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 29-Dec-08
	SI4160DY-T1-GE3	230Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI4160DY	230Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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类似说明 - SI4160DY

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