SI8424CDB datasheet(1/11 Pages) TFUNK

部件名	SI8424CDB

功能描述	N-Channel 8 V (D-S) MOSFET

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制造商	TFUNK [Vishay Telefunken]

网页	http://www.vishay.com

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Si8424CDB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. C, 20-Jul-15

1

Document Number: 63894

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 8 V (D-S) MOSFET

Marking Code: 8424C

Ordering Information:



Si8424CDB-T1-E1 (Lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET® power MOSFET

• Low-on resistance

• Ultra-small 1.6 mm x 1.6 mm maximum outline

• Ultra-thin 0.6 mm maximum height

• Material

categorization:

for

definitions

of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Mobile computing, smart phones,

tablet PCs



- Load switch



- Low voltage drop switch

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on TA = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) () MAX.

ID (A) a, e

Qg (TYP.)

8

0.020 at VGS = 4.5 V

10

25 nC

0.021 at VGS = 2.5 V

9.7

0.023 at VGS = 1.8 V

9.3

0.028 at VGS = 1.5 V

8.4

0.045 at VGS = 1.2 V

5

MICRO FOOT® 1.6 x 1.6

Bump Side View

1

G

4

S

D

3

D

2

Backside View

1

1.6

mm

8424C

xxx

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

8

V

Gate-Source Voltage

VGS

± 5

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

10 a

A

TA = 70 °C

8 a

TA = 25 °C

6.3 b

TA = 70 °C

5.1 b

Pulsed Drain Current (t = 300 μs)

IDM

25

Continuous Source-Drain Diode Current

TA = 25 °C

IS

2.3 a

TA = 25 °C

0.92 b

Maximum Power Dissipation

TA = 25 °C

PD

2.7 a

W

TA = 70 °C

1.8 a

TA = 25 °C

1.1 b

TA = 70 °C

0.73 b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Package Reflow Conditions c

VPR

260

IR / convection

260

类似零件编号 - SI8424CDB

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI8424CDB	243Kb / 11P	N-Channel 8 V (D-S) MOSFET Rev. A, 10-Sep-12
Vishay Siliconix	SI8424CDB	250Kb / 11P	N-Channel 8 V (D-S) MOSFET 01-Jan-2022

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类似说明 - SI8424CDB

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	SI1050X	122Kb / 6P	N-Channel 8-V (D-S) MOSFET Rev. B, 24-Mar-08