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SI3900DV 数据表(PDF) 4 Page - Vishay Telefunken |
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SI3900DV 数据表(HTML) 4 Page - Vishay Telefunken |
4 / 9 page www.vishay.com 4 Document Number: 71178 S09-2275-Rev. D, 02-Nov-09 Vishay Siliconix Si3900DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71178. Threshold Voltage - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0.01 0 1 6 8 2 4 10 30 0.1 Time (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-3 10-2 1 10 600 10-1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) |
类似零件编号 - SI3900DV |
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类似说明 - SI3900DV |
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