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SI1922ED 数据表(PDF) 1 Page - Vishay Telefunken |
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SI1922ED 数据表(HTML) 1 Page - Vishay Telefunken |
1 / 12 page Vishay Siliconix Si1922EDH Document Number: 67192 S11-2307-Rev. B, 21-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Typical ESD Protection 2100 V HBM • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) a Qg (Typ.) 20 0.198 at VGS = 4.5 V 1.3a 0.9 nC 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a Marking Code CG XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 Ordering Information: Si1922EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) D 1 S 1 G 1 1 k D 2 S 2 G 2 1 k ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 1.3a A TC = 70 °C 1.3a TA = 25 °C 1.3a, b, c TA = 70 °C 1.2b, c Pulsed Drain Current IDM 4 Continuous Source-Drain Diode Current TC = 25 °C IS 1 TA = 25 °C 0.61b, c Maximum Power Dissipation TC = 25 °C PD 1.25 W TC = 70 °C 0.8 TA = 25 °C 0.74b, c TA = 70 °C 0.47b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 130 170 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 |
类似零件编号 - SI1922ED |
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类似说明 - SI1922ED |
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