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SI1442DH 数据表(PDF) 1 Page - Vishay Telefunken |
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SI1442DH 数据表(HTML) 1 Page - Vishay Telefunken |
1 / 12 page Vishay Siliconix Si1442DH New Product Document Number: 63772 S12-0546-Rev. A, 12-Mar-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com N-Channel 12 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch and Battery Switch for Portable Devices • DC/DC Converters • Low On-Resistance for Low Voltage Drop Notes: a. TF = 25 °C, package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a Qg (Typ.) 12 0.020 at VGS = 4.5 V 4 13.1 nC 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S Ordering Information: Si1442DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Marking Code AT XX Lot Traceability and Date Code Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TF = 25 °C ID 4a A TF = 70 °C 4a TA = 25 °C 4a, b, c TA = 70 °C 4a, b, c Pulsed Drain Current (t = 300 µs) IDM 20 Continuous Source-Drain Diode Current TF = 25 °C IS 2.3 TA = 25 °C 1.3b, c Maximum Power Dissipation TF = 25 °C PD 2.8 W TF = 70 °C 1.8 TA = 25 °C 1.56b, c TA = 70 °C 1b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 |
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