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UF3808G-TA3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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UF3808G-TA3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF3808 Preliminary POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R205-026..a ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (Note 6) VGS=10V, TC=25°C ID 140 A VGS=10V, TC=100°C 97 A Pulsed (Note 5) IDM 550 A Avalanche Current (Note 5) IAR 82 A Avalanche Energy Single Pulse (Note 3) EAS 430 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5.5 V/ns Power Dissipation (TC=25°C) PD 330 W Linear Derating Factor 2.2 W/°C Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. L=0.13mH, IAS=82A, VDD=38V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤82A, di/dt≤310A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Repetitive rating; pulse width limited by max. junction temperature. 6. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °С/W Junction to Case θJC 0.45 °С/W |
类似零件编号 - UF3808G-TA3-T |
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类似说明 - UF3808G-TA3-T |
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