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TC850 数据表(PDF) 3 Page - Microchip Technology |
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TC850 数据表(HTML) 3 Page - Microchip Technology |
3 / 26 page © 2006 Microchip Technology Inc. DS21479C-page 3 TC850 1.0 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Positive Supply Voltage..........................................+6V Negative Supply Voltage ....................................... - 9V Analog Input Voltage (IN+ pr IN-) .............. VDD to VSS Voltage Reference Input: (REF1+, REF1–, REF2+).................. VDD to VSS Logic Input Voltage............. VDD + 0.3V to GND – 0.3V Current Into Any Pin...........................................10 mA While Operating .....................................100 μA Ambient Operating Temperature Range C Device....................................... 0°C to +70°C I Device......................................-25°C to +85°C Package Power Dissipation (TA ≤ 70°C) CerDIP .....................................................2.29 Ω Plastic DIP................................................1.23 Ω Plastic PLCC ...........................................1.23 Ω *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TABLE 1-1: TC850 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VS = ±5V; FCLK = 61.44kHz, VFS = 3.2768V, TA = 25°C, Figure 1-1, unless otherwise specified. Symbol Parameter Min Typ Max Unit Test Conditions Zero Scale Error ±0.25 ±0.5 LSB VIN = 0V End Point Linearity Error — ±1 ±2 LSB -VFS ≤ VIN ≤ +VFS Differential Nonlinearity — ±0.1 ±0.5 LSB IIN Input Leakage Current — 30 75 pA VIN = 0V, TA = 25°C — 1.1 3 nA -25° ≤ TA ≤ +85°C VCMR Common Mode Voltage Range VSS + 1.5 — VSS – 1.5 V Over Operating Temperature Range CMRR Common Mode Rejection Ratio — 80 — dB VIN = 0V, VCM = ±1V Full Scale Gain Temperature Coefficient — 2 5 ppm/°C External Ref. Temperature Coefficient = 0 ppm/°C 0°C ≤ TA ≤ +70°C Zero Scale Error Temperature Coefficient — 0.3 2 μV/°C V IN = 0V 0°C ≤ TA ≤ +70°C Full Scale Magnitude Symmetry Error — 0.5 2 LSB VIN = ±3.275V eN Input Noise — 30 — μV P-P Not Exceeded 95% of Time IS+ Positive Supply Current — 2 3.5 mA IS– Negative Supply Current — 2 3.5 mA VOH Output High Voltage 3.5 4.9 — V IO = 500 μA VOL Output Low Voltage — 0.15 0.4 V IO = 1.6 mA IOP Output Leakage Current — 0.1 1 μA Pins 8 -15, High-impedance State VIH Input High Voltage 3.5 2.3 — V Note 3 VIL Input Low Voltage — 2.1 1 V Note 3 IPU Input Pull-Up Current — 4 — μA Pins 2, 3, 4, 6, 7; VIN = 0V IPD Input Pull-Down Current — 14 — μA Pins 1, 5; VIN = 5V IOSC Oscillator Output Current — 140 — μA Pin 18, VOUT = 2.5V Note 1: Demand mode, CONT/DEMAND = LOW. Figure 8-2 timing diagram. CL = 100 pF. 2: Continuous mode, CONT/DEMAND = HIGH. Figure 8-4 timing diagram. 3: Digital inputs have CMOS logic levels and internal pull-up/pull-down resistors. For TTL compatibility, external pull-up resistors to VDD are recommended. |
类似零件编号 - TC850 |
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类似说明 - TC850 |
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