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TC655EUN 数据表(PDF) 3 Page - Microchip Technology |
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TC655EUN 数据表(HTML) 3 Page - Microchip Technology |
3 / 36 page 2002 Microchip Technology Inc. DS21734A-page 3 TC654/TC655 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings * VDD..................................................................................6.5 V Input Voltages .................................... -0.3 V to (VDD + 0.3 V) Output Voltages ................................. -0.3 V to (VDD + 0.3 V) Storage temperature .....................................-65°C to +150°C Ambient temp. with power applied ................-40°C to +125°C Maximum Junction Temperature, TJ ............................. 150°C ESD protection on all pins ..................................................≥ 4kV *Notice: Stresses above those listed under “Maximum rat- ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Name Function VIN Analog Input CF Analog Output SCLK Serial Clock Input SDA Serial Data In/Out (Open Drain) GND Ground FAULT Digital (Open Drain) Output SENSE2 Analog Input SENSE1 Analog Input VOUT Digital Output VDD Power Supply Input ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, all limits are specified for VDD = 3.0 V to 5.5 V, -40°C <TA < +85°C. Parameters Sym Min Typ Max Units Conditions Supply Voltage VDD 3.0 — 5.5 V Operating Supply Current IDD — 150 300 µA Pins 7, 8, 9 Open Shutdown Mode Supply Current IDDSHDN — 5 10 µA Pins 7, 8, 9 Open VOUT PWM Output VOUT Rise Time tR — — 50 µsec IOH = 5 mA, Note 1 VOUT Fall Time tF — — 50 µsec IOL = 1 mA, Note 1 Sink Current at VOUT Output IOL 1.0 — — mA VOL = 10% of VDD Source Current at VOUT Output IOH 5.0 — — mA VOH = 80% of VDD PWM Frequency F 26 30 34 Hz CF = 1 µF VIN Input VIN Input Voltage for 100% PWM duty-cycle VC(MAX) 2.45 2.6 2.75 V VC(MAX) - VC(MIN) VCRANGE 1.25 1.4 1.55 V VIN Input Resistance — 10M — Ω VDD = 5.0 V VIN Input Leakage Current IIN -1.0 — +1.0 µA SENSE Input SENSE Input Threshold Voltage with Respect to GND VTHSENSE 80 100 120 mV FAULT Output FAULT Output LOW Voltage VOL —— 0.3 V IOL = 2.5 mA FAULT Output Response Time tFAULT —2.4 — sec Fan RPM-to-Digital Output Fan RPM ERROR -15 — +15 % RPM > 1600 Note 1: Not production tested, ensured by design, tested during characterization. 2: For 5.0 V > VDD ≤ 5.5 V, the limit for VIH = 2.2 V. |
类似零件编号 - TC655EUN |
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类似说明 - TC655EUN |
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