1N40_15 datasheet(3/4 Pages) UTC

部件名	1N40

功能描述	N-CHANNEL MOSFET ARRAY FOR SWITCHING

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-529.b

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

400

V

Breakdown Voltage Temperature

Coefficient

BV

△

DSS/T

△ J Reference to 25°C, ID=250µA

0.4

V/°C

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V

1

µA

Forward

VGS=+30V, VDS=0V

+100 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=0.7A

4.5

6.8

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

115 150

pF

Output Capacitance

COSS

20

30

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

3

4

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

4.0

5.5

nC

Gate to Source Charge

QGS

1.1

nC

Gate to Drain Charge

QGD

VGS=10V, VDS=320V, ID=1.8A

(Note 1, 2)

2.1

nC

Turn-ON Delay Time

tD(ON)

7

25

ns

Rise Time

tR

30

70

ns

Turn-OFF Delay Time

tD(OFF)

7

25

ns

Fall-Time

tF

VDD=200V, ID=1.8A, RG=25Ω

(Note 1, 2)

25

60

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

1.4

A

Maximum Body-Diode Pulsed Current

ISM

5.6

A

Drain-Source Diode Forward Voltage

VSD

IS=1.4A, VGS=0V

1.5

V

Body Diode Reverse Recovery Time

trr

160

ns

Body Diode Reverse Recovery Charge

QRR

IS=1.8A, VGS=0V, dIF/dt=100A/µs

(Note 1)

0.4

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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