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BTA2008W-800D 数据表(PDF) 9 Page - NXP Semiconductors |
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BTA2008W-800D 数据表(HTML) 9 Page - NXP Semiconductors |
9 / 15 page NXP Semiconductors BTA2008W-800D 3Q Hi-Com Triac BTA2008W-800D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 14 August 2014 9 / 15 IGT IGT(25°C) Tj (°C) - 50 0 150 100 50 1 2 3 0 003aaa959 (1) (2) (3) (1) (2) (3) (1) T2- G- (2) T2+ G- (3) T2+ G+ Fig. 9. Normalized gate trigger current as a function of junction temperature Tj (°C) -50 150 100 0 50 003aak510 1 2 3 0 IL IL(25°C) Fig. 10. Normalized latching current as a function of junction temperature Tj (°C) -50 150 100 0 50 003aak511 1 2 3 0 IH IH(25°C) Fig. 11. Normalized holding current as a function of junction temperature 003aac114 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 VT (V) IT (A) (1) (2) (3) Vo = 0.835 V; Rs = 0.50 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 12. On-state current as a function of on-state voltage |
类似零件编号 - BTA2008W-800D |
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类似说明 - BTA2008W-800D |
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