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TIP127G-TA3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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TIP127G-TA3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page TIP127 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R203-005. I ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -100 V Emitter to Base Voltage VEBO -5 V Collector Current DC IC -5 A Pulse ICP -8 A Power Dissipation TO-220 PD 65 W TO-220F 34 W TO-126/TO-126S 36 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently. Absolute maximum ratings are only stress ratings and it is not implied for functional device operation. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=-10mA -100 V Collector Cut-Off Current ICBO VCB=-100V -200 uA Collector-Cut-Off Current ICEO VCE=-50V -500 uA Emitter Cut-Off Current IEBO VEB=-5V -2 mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-3A, IB=-12mA -2 V Collector-Emitter Saturation Voltage VCE(SAT)2 IC=-5A, IB=-20mA -4 V Base-Emitter Saturation Voltage VBE(ON) VCE=-3V, IC=-3A -2.5 V DC Current Gain hFE VCE=-3V , IC=-500mA 1000 VCE=-3V , IC=-3A 1000 |
类似零件编号 - TIP127G-TA3-T |
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类似说明 - TIP127G-TA3-T |
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