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SQP120N10-3M8 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SQP120N10-3M8
功能描述  Automotive N-Channel 100 V (D-S) 175 °C MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SQP120N10-3M8 数据表(HTML) 1 Page - Vishay Siliconix

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SQP120N10-3m8
www.vishay.com
Vishay Siliconix
S13-1433-Rev. A, 01-Jul-13
1
Document Number: 63403
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
•100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width
 300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () at VGS = 10 V
0.0038
ID (A)
120
Configuration
Single
D
G
S
N-Channel MOSFET
TO-220
Top View
GD S
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free and Halogen-free
SQP120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
ID
120
A
TC = 125 °C
102
Continuous Source Current (Diode Conduction)a
IS
120
Pulsed Drain Currentb
IDM
480
Single Pulse Avalanche Current
L = 0.1 mH
IAS
73
Single Pulse Avalanche Energy
EAS
266
mJ
Maximum Power Dissipationb
TC = 25 °C
PD
250
W
TC = 125 °C
83
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mountc
RthJA
40
°C/W
Junction-to-Case (Drain)
RthJC
0.6


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