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SQP25N15-52 数据表(PDF) 4 Page - Vishay Siliconix |
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SQP25N15-52 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page SQP25N15-52 www.vishay.com Vishay Siliconix S15-2048-Rev. A, 31-Aug-15 4 Document Number: 66974 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Gate Charge Source Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 2 4 6 8 10 0 8 16 24 32 40 Q g -Total Gate Charge (nC) I D = 25 A V DS = 75 V 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C -2.0 -1.4 -0.8 -0.2 0.4 1.0 - 50 - 25 0 25 50 75 100 125 150 175 T J -Temperature (°C) I D = 250 μA I D = 5 mA 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) I D = 15 A V GS = 10 V 0.00 0.05 0.10 0.15 0.20 0.25 02468 10 V GS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C 150 160 170 180 190 200 - 50 - 25 0 25 50 75 100 125 150 175 I D = 10 mA TJ - Junction Temperature (°C) |
类似零件编号 - SQP25N15-52_15 |
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类似说明 - SQP25N15-52_15 |
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