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2SC3355G-T92-B 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC3355G-T92-B 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-036.C ABSOLUTE MAXIMUM RATING (T A=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 100 mA Total power dissipation PT 600 mW Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 µA Emitter Cutoff Current IEBO VEB=1V, IC=0 1.0 µA DC Current Gain hFE VCE=10V, IC=20mA 50 300 Gain bandwidth Product fT VCE=10V, IC=20mA 7 GHz Feed-Back Capacitance Cre VCB=10V, IE=0, f=1.0MHz 1.0 pF Noise Figure NF VCE=10V, IC=7mA, f=1.0GHz 1.1 dB |
类似零件编号 - 2SC3355G-T92-B |
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类似说明 - 2SC3355G-T92-B |
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