2SC3355G-T92-B datasheet(2/3 Pages) UTC

部件名	2SC3355G-T92-B

功能描述	HIGH FREQUENCY LOW NOISE AMPLIFIER

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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2SC3355

NPN SILICON EPITAXIAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-036.C



ABSOLUTE MAXIMUM RATING (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

12

V

Emitter-base voltage

VEBO

3

V

Collector current

IC

100

mA

Total power dissipation

PT

600

mW

Junction Temperature

TJ

125

°C

Operating Temperature

TOPR

-20 ~ +85

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cutoff Current

ICBO

VCB=10V, IE=0

1.0

µA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0

1.0

µA

DC Current Gain

hFE

VCE=10V, IC=20mA

50

300

Gain bandwidth Product

fT

VCE=10V, IC=20mA

7

GHz

Feed-Back Capacitance

Cre

VCB=10V, IE=0, f=1.0MHz

1.0

pF

Noise Figure

NF

VCE=10V, IC=7mA, f=1.0GHz

1.1

dB

类似零件编号 - 2SC3355G-T92-B

制造商	部件名	数据表	功能描述
Unisonic Technologies	2SC3355G-T92-B	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER

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