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2SA1627AG-X-AA3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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2SA1627AG-X-AA3-R 数据表(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SA1627A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R217-004.G TYPICAL CHARACTERISTICS -2.0 0 Collector Current vs. Collector to Emitter Voltage Collector to Emitter Voltage, VCE (V) -6.0 -10 -4.0 -8.0 0 -20 -40 -60 -80 -100 IB=1.8mA IB=1.6mA IB=1.4mA IB=1.2mA IB=1.0mA IB=0.8mA IB=0.6mA IB=0.4mA IB=0.2mA -0.005 -0.002 DC Current Gain vs. Collector Current Collector Current, IC (A) -0.1 -0.02 -0.5 1 10 30 100 300 1000 3 -0.01 -0.05 -2.0 -0.2 -1.0 VCE=-5.0V Collector Current vs. Base to Emitter Voltage Base to Emitter Voltage, VBE (V) -0.01 -0.1 -0.3 -1.0 0 -0.4 -0.8 -1.2 -1.6 -0.03 -0.003 -0.2 -0.6 -1.0 -1.4 VCE=-5.0V Collector and Base Saturation Voltage vs. Collector Current Collector Current, IC (A) -0.1 -0.3 -1.0 -3.0 -0.005 -0.01 -0.05 -0.2 -0.03 -0.02 -0.1 -0.5 IC=5IB VBE(SAT) VCE(SAT) Output Capacitance vs. Collector to Base Voltage Collector to Base Voltage, VCB (V) 5.0 20 50 200 -3.0 -10 -30 -100 -300 10 2.0 IE=0 100 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature, TA ( ) 0.2 0.6 0.8 1.2 0 25 75 100 150 0.4 0 1.0 50 125 Free Air |
类似零件编号 - 2SA1627AG-X-AA3-R |
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类似说明 - 2SA1627AG-X-AA3-R |
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