2SA1627AG-X-AA3-R datasheet(3/4 Pages) UTC

部件名	2SA1627AG-X-AA3-R

功能描述	PNP EPITAXIAL SILICON TRANSISTOR

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

3 / 4 page

2SA1627A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R217-004.G



TYPICAL CHARACTERISTICS

-2.0

0

Collector Current vs.

Collector to Emitter Voltage

Collector to Emitter Voltage, VCE (V)

-6.0

-10

-4.0

-8.0

0

-20

-40

-60

-80

-100

IB=1.8mA

IB=1.6mA

IB=1.4mA

IB=1.2mA

IB=1.0mA

IB=0.8mA

IB=0.6mA

IB=0.4mA

IB=0.2mA

-0.005

-0.002

DC Current Gain vs. Collector Current

Collector Current, IC (A)

-0.1

-0.02

-0.5

1

10

30

100

300

1000

3

-0.01

-0.05

-2.0

-0.2

-1.0

VCE=-5.0V

Collector Current vs.

Base to Emitter Voltage

Base to Emitter Voltage, VBE (V)

-0.01

-0.1

-0.3

-1.0

0

-0.4

-0.8

-1.2

-1.6

-0.03

-0.003

-0.2

-0.6

-1.0

-1.4

VCE=-5.0V

Collector and Base Saturation Voltage

vs. Collector Current

Collector Current, IC (A)

-0.1

-0.3

-1.0

-3.0

-0.005 -0.01

-0.05

-0.2

-0.03

-0.02

-0.1

-0.5

IC=5IB

VBE(SAT)

VCE(SAT)

Output Capacitance vs.

Collector to Base Voltage

Collector to Base Voltage, VCB (V)

5.0

20

50

200

-3.0

-10

-30

-100

-300

10

2.0

IE=0

100

Collector Power Dissipation

vs. Ambient Temperature

Ambient Temperature, TA ( )

0.2

0.6

0.8

1.2

0

25

75

100

150

0.4

0

1.0

50

125

Free Air

类似零件编号 - 2SA1627AG-X-AA3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	2SA1627AG-X-T60-K	173Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR
	2SA1627AG-X-T6C-K	173Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR
	2SA1627AG-X-TN3-R	173Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR
	2SA1627AG-X-TN3-T	173Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR

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类似说明 - 2SA1627AG-X-AA3-R

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