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BF1207 数据表(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1207 数据表(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 22 page 9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 10 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) = 18 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) = 18 mA. Fig 12. Amplifier A: input admittance as a function of frequency; typical values Fig 13. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) = 18 mA. VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) = 18 mA. Fig 14. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 15. Amplifier A: output admittance as a function of frequency; typical values 001aac890 f (MHz) 10 103 102 10−1 1 10 102 bis, gis (mS) 10−2 bis gis f (MHz) 10 103 102 001aac891 10 102 |yfs| (mS) 1 −10 −102 ϕfs (deg) −1 |yfs| ϕfs 001aac892 102 10 103 |yrs| ( µS) 1 f (MHz) 10 103 102 −102 −10 −103 ϕrs (deg) −1 |yrs| ϕrs 001aac893 1 10−1 10 bos, gos (mS) 10−2 f (MHz) 10 103 102 bos gos |
类似零件编号 - BF1207_15 |
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类似说明 - BF1207_15 |
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