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IRLZ34NPBF 数据表(PDF) 2 Page - International Rectifier |
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IRLZ34NPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLZ34NPbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.065 V/°C Reference to 25°C, ID = 1mA 0.035 VGS = 10V, ID = 16A Ω VGS = 5.0V, ID = 16A 0.060 VGS = 4.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 S VDS = 25V, ID = 16A 25 VDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 16V Gate-to-Source Reverse Leakage -100 VGS = -16V Qg Total Gate Charge 25 ID = 16A Qgs Gate-to-Source Charge 5.2 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge 14 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time 8.9 VDD = 28V tr Rise Time 100 ID = 16A td(off) Turn-Off Delay Time 21 RG = 6.5Ω, VGS = 5.0V tf Fall Time 29 RD = 1.8Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 880 VGS = 0V Coss Output Capacitance 220 pF VDS = 25V Crss Reverse Transfer Capacitance 94 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) S D G IGSS LS Internal Source Inductance 7.5 LD Internal Drain Inductance 4.5 µA nA ns nH RDS(on) Static Drain-to-Source On-Resistance 0.046 IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time 76 110 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge 190 290 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 110 30 S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. |
类似零件编号 - IRLZ34NPBF_15 |
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类似说明 - IRLZ34NPBF_15 |
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