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SI4420DYPBF 数据表(PDF) 2 Page - International Rectifier

部件名 SI4420DYPBF
功能描述  Simple Drive Requirements
Download  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

SI4420DYPBF 数据表(HTML) 2 Page - International Rectifier

  SI4420DYPBF Datasheet HTML 1Page - International Rectifier SI4420DYPBF Datasheet HTML 2Page - International Rectifier SI4420DYPBF Datasheet HTML 3Page - International Rectifier SI4420DYPBF Datasheet HTML 4Page - International Rectifier SI4420DYPBF Datasheet HTML 5Page - International Rectifier SI4420DYPBF Datasheet HTML 6Page - International Rectifier SI4420DYPBF Datasheet HTML 7Page - International Rectifier SI4420DYPBF Datasheet HTML 8Page - International Rectifier  
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Si4420DYPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Diode Conduction)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.1
V
TJ = 25°C, IS = 2.3A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 25°C, IF = 2.3A
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
––– –––
––– –––
50
2.3
A
S
D
G
ƒ When mounted on FR4 Board, t ≤10 sec
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.028 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.009
VGS = 10V, ID = 12.5A
‚
–––
––– 0.013
VGS = 4.5V, ID = 10.5A
‚
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
–––
29
–––
S
VDS = 15V, ID = 12.5A
–––
–––
1.0
VDS = 30V, VGS = 0V
–––
–––
5.0
VDS = 30V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
52
78
ID = 12.5A
Qgs
Gate-to-Source Charge
–––
8.7
–––
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
–––
VGS = 10V, See Fig. 6
‚
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 15V
tr
Rise Time
–––
10
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
55
–––
RG = 6.0Ω
tf
Fall Time
–––
47
–––
RD = 15Ω,
‚
Ciss
Input Capacitance
––– 2240 –––
VGS = 0V
Coss
Output Capacitance
––– 1100 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
150
–––
ƒ = 1.0MHz, See Fig. 5
‚
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
„ Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = 8.9A. (See Figure 15)


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