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2SA1129 数据表(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1129 数据表(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1129 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -30 V VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.1A -0.3 V VCEsat -2 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V VBEsat-1 Base-emitter saturation voltage IC=-3A; IB=-0.1A -1.5 V VBEsat -2 Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-3A ; VCE=-1V 40 200 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 Switching times resistive load ton Turn-on time 1.0 μs tstg Storage time 2.5 μs tf Fall time IC=-5.0A IB1=- IB2=-0.5A RL=4Ω;VCC=-20V 1.0 μs hFE-1 Classifications M L K 40-80 60-120 100-200 |
类似零件编号 - 2SA1129_15 |
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类似说明 - 2SA1129_15 |
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