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IRFE9110 数据表(PDF) 2 Page - International Rectifier

部件名 IRFE9110
功能描述  Simple Drive Requirements
Download  7 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFE9110 数据表(HTML) 2 Page - International Rectifier

  IRFE9110_15 Datasheet HTML 1Page - International Rectifier IRFE9110_15 Datasheet HTML 2Page - International Rectifier IRFE9110_15 Datasheet HTML 3Page - International Rectifier IRFE9110_15 Datasheet HTML 4Page - International Rectifier IRFE9110_15 Datasheet HTML 5Page - International Rectifier IRFE9110_15 Datasheet HTML 6Page - International Rectifier IRFE9110_15 Datasheet HTML 7Page - International Rectifier  
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IRFE9110
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
8.3
RthJ-PCB
Junction to PC Board
27
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-2.5
ISM
Pulse Source Current (Body Diode) ➀
-10
VSD
Diode Forward Voltage
-5.5
V
Tj = 25°C, IS = -2.5A, VGS = 0V ➃
trr
Reverse Recovery Time
200
nS
Tj = 25°C, IF = -2.5A, di/dt ≤-100A/µs
QRR
Reverse Recovery Charge
380
µc
VDD ≤ -50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.08
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
1.2
VGS = -10V, ID = -1.6A➃
Resistance
1.38
VGS = -10V, ID = -2.5A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.9
S ( )
VDS > -15V, IDS = -1.6A➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -80V, VGS= 0V
-250
VDS =-80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS =20V
Qg
Total Gate Charge
15
VGS =-10V, ID= -2.5A
Qgs
Gate-to-Source Charge
7.0
nC
VDS =-50V
Qgd
Gate-to-Drain (‘Miller’) Charge
8.0
td(on)
Turn-On Delay Time
30
VDD =-50V, ID = -2.5A,
tr
Rise Time
60
VGS =-10V, RG =7.5Ω
td(off)
Turn-Off Delay Time
40
tf
Fall Time
40
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
214
VGS = 0V, VDS = -25V
Coss
Output Capacitance
100
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
20
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad


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