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IRFB5620PBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRFB5620PBF
功能描述  Key Parameters Optimized for Class-D Audio Amplifier Applications
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFB5620PBF 数据表(HTML) 1 Page - International Rectifier

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www.irf.com
1
09/05/08
IRFB5620PbF
Notes
 through … are on page 2
DIGITAL AUDIO MOSFET
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
S
D
G
TO-220AB
D
S
D
G
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current c
PD @TC = 25°C
Power Dissipation
f
PD @TC = 100°C
Power Dissipation f
Linear Derating Factor
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
f
–––
1.045
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
f
–––
62
°C/W
°C
A
V
W
144
72
0.96
10lb
xin (1.1Nxm)
-55 to + 175
300
Max.
18
100
±20
200
25
VDS
200
V
RDS(ON) typ. @ 10V
60
m
:
Qg typ.
25
nC
Qsw typ.
9.8
nC
RG(int) typ.
2.6
TJ max
175
°C
Key Parameters
PD - 96174


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