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IRF6775MPBF_15 Datasheet(数据表) 6 Page - International Rectifier

部件型号  IRF6775MPBF_15
说明  Latest MOSFET Silicon technology
下载  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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 6 page
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IRF6775MTRPbF
6
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
February 26, 2014
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L
S
20K
Fig 18.
Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
*** VGS = 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

**
*
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel




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