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IRF5Y5305CM 数据表(PDF) 1 Page - International Rectifier

部件名 IRF5Y5305CM
功能描述  Avalanche Energy Ratings
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF5Y5305CM 数据表(HTML) 1 Page - International Rectifier

  IRF5Y5305CM_15 Datasheet HTML 1Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 2Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 3Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 4Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 5Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 6Page - International Rectifier IRF5Y5305CM_15 Datasheet HTML 7Page - International Rectifier  
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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25°C
Continuous Drain Current
-18*
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
-15
IDM
Pulsed Drain Current ➀
-72
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
160
mJ
IAR
Avalanche Current ➀
-16
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
3.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 (Typical)
g
oC
A
11/3/00
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5Y5305CM
-55V
0.065
Ω -18A*
For footnotes refer to the last page
TO-257AA
HEXFET® POWER MOSFET
IRF5Y5305CM
THRU-HOLE (TO-257AA)
55V, P-CHANNEL
Fifth Generation HEXFET®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
* Current is limited by package
PD - 94028


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